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•Latest technologies of Full-SiC Power Devices by Dr. Kondo Harufusa

•Failure Mode of Power Module by Mr. He Hongtao

•New generation HVIGBT by Mr. Sun Jian


Time:13:30-17:00, Dec. 11 (Tuesday), 2018

Venue: 3-102,West Main-building

联系人:袁立强

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