近年来主持的纵向项目

2026，国家自然科学基金面上项目，基于功率半导体器件的超快开通固态开关：物理机理与性能调控

2023，国家自然科学基金青年项目，IGCT器件失效短路机理及性能优化研究

2022，第七批博士后创新人才支持计划项目

2022，中国博士后科学基金面上项目，面向关断能力提升的IGCT器件横向结构优化研究：机理、设计与实现

期刊论文选

[1] Wu J, Zhu Y, Ren C, Liu J*, et al. Customized IGCT for Next-Generation Power Systems via Cell-Level Turn-Off Capability Enhancement[J]. CSEE Journal of Power and Energy Systems, 2026. (accepted)

[2] Liu J, Pan J, Wu J, et al. Experimental Investigation on the Turn-Off Failure Mechanism of IGCT[J]. IEEE Transactions on Power Electronics, 2024.

[3] Wu J, Pan J, Ren C, Liu J*, et al. Decipher Turn-on Voltage Plateau of High-Voltage Integrated Gate Commutated Thyristors[J]. IEEE Transactions on Power Electronics, 2024.

[4] Wang J, Chen L, Zhang X, Liu J*, et al. Enhancing turn-off performance in igct-based high power applications—part i: Anomalous high current turn-off mode and safe operating area expansion at ultra-low voltage[J]. IEEE Transactions on Power Electronics, 2024.

[5] Ren C, Pan J, Liu J*, Wang Z, Zhao B, Yu Z, Wu J*, et al. Improving dv/dt immunity of reverse blocking IGCT for hybrid line-commutated converter[J]. IEEE Transactions on Power Electronics, 2024.

[6] Zhou W, Shang Z, Liu J*, Chen Z, Wu J*, et al. Experimental Investigation on the Turn-Off Current Redistribution Characteristics of IGCT Based on an Isolated Anode Design[J]. IEEE Transactions on Electron Devices, 2024.

[7] Liu J, Yu Z, Wang X, et al. A Robust Non-destructive Test Scheme based on Multi-Stage Anode Voltage Detection for 4500 V Single Cell Turn-off Capability of Press Packed Devices[J]. IEEE Transactions on Power Electronics, 2020.

[8] Liu J, Zhao B, Zhou W, et al. Precise Measurement Methodology of nH-level Gate Electrode Inductance Based on Calculation-error-free Algorithm for Unity-gain Turn-off Devices[J]. IEEE Transactions on Industrial Electronics, 2020.

[9] Liu J, Zhao B, Chen Y, et al. A Novel Controlled Punch-through IGCT for Modular Multilevel Converter with Over Voltage Bypass Function[J]. IEEE Transactions on Power Electronics, 2020.

[10] Liu J, Yu Z, Zhou W, et al. Ultra-Low on-State Voltage IGCT for Solid-State DC Circuit Breaker With Single-Switching Attribute[J]. IEEE Transactions on Power Electronics, 2020, 36(3): 3292-3303.

专利选

[1] Jiapeng Liu, Rong Zeng, Jinpeng Wu, et al. Turn-off circuit, drive circuit, IGCT, electrical equipment, and turn-off method (Application Number: PCT/CN2025/093272)

[2] Jiapeng Liu, Jinpeng Wu, Rong Zeng, et al. Gate-commutated thyristor and preparation method therefor (Application Number: PCT/CN2024/096808)

[3] Rong Zeng, Jiapeng Liu, Biao Zhao, et al. Buffer region variable doping structure used for overvoltage breakdown function, and semiconductor device (Application Number: PCT/CN2020/123817)

[4] Rong Zeng, Jiapeng Liu, Wenpeng Zhou, et al. Component having reverse flow function (Application Number: PCT/CN2019/104539)

[5] Rong Zeng, Zhengyu Chen, Jiapeng Liu, et al. Electrical device and electrical apparatus (Application Number: PCT/CN2018/103750)