时间：2026年9月10日（周四） 上午 10:00

地点：西主楼会议室 3-103

题目：Recent Advances in Gallium Nitride and Gallium Oxide Power Semiconductors（氮化镓及氧化镓功率半导体技术新进展）

报告人：张宇昊教授，香港大学电机与计算机工程学系

邀请人：王雄飞

报告简介

宽禁带和超宽禁带半导体正在从根本上改变电力电子领域的格局。虽然氮化镓（GaN）在30-900伏特范围内已取得商业成功，但在较低（<30伏特）和较高（>1千伏特）电压极端情况下，仍有巨大的潜力尚未开发。本次演讲首先探讨了氮化镓技术的拓展前沿，重点介绍了新兴架构、单片集成以及从人工智能处理器电源供应到电动汽车和航空航天系统的变革性应用。

同时，氧化镓（Ga2O3）作为极强功率应用的首选超宽带隙材料，正在迅速成熟。我们将讨论我们最近对Ga2O3器件在高温高压应用中的探索，实现了＞10 kV的击穿电压和250℃的工作稳定性。为了解决Ga2O3固有的热挑战，我们还将详细介绍先进的器件封装协同设计，该设计已使兆瓦级Ga2O3功率模块能够用于脉冲功率电子设备。

总体而言，我们在基础器件架构、可靠性工程和先进封装方面展示了协同创新，以拓展下一代电力电子技术的前沿。

Wide-bandgap and ultra-wide-bandgap semiconductors are fundamentally transforming the landscape of power electronics. While Gallium Nitride (GaN) has achieved commercial success in the 30–900 V range, massive untapped potential remains at both the lower (<30 V) and upper (>1 kV) voltage extremes. This talk first explores the expanding frontier of GaN technology, highlighting emerging architectures, monolithic integration, and transformative applications ranging from AI processor power delivery to electric vehicles and aerospace systems.

Simultaneously, Gallium Oxide (Ga2O3) is rapidly maturing as a premier ultra-wide-bandgap candidate for extreme-power applications. We will discuss our recent exploration of Ga2O3 devices for high-temperature high-voltage applications, achieving >10 kV breakdown voltages and 250 oC operation stability. To address the inherent thermal challenges of Ga2O3, we will also detail advanced device-packaging co-design that have enabled megawatt-class Ga2O3 power modules for pulsed power electronics.

Overall, we present coordinated innovations in fundamental device architectures, reliability engineering, and advanced packaging to extend the frontier of next-generation power electronics.

报告人简介

张宇昊现任香港大学电气与计算机工程系正教授。同时，他也是香港大学先进半导体与集成电路中心的副主任。在加入香港大学之前，他曾担任弗吉尼亚理工大学的Shirish S. Sathaye副教授，领导美国最大的电力电子学术研究中心——电力电子系统中心的功率半导体研究。他分别于2017年和2013年在麻省理工学院（MIT）获得电气工程博士学位和硕士学位。他撰写了200多篇论文（包括7篇Nature/Science系列论文、21篇IEDM论文、20多篇T-PEL论文，并作为通讯作者），以及2本书籍章节，并拥有9项已授权的美国专利。他还是10多篇亮点/特色/获奖论文的合著者。他的研究成果被引用超过14,000次，h指数为61，并被《Nature Electronics》、《Semiconductor Today》、《Compound Semiconductors》、《EE Times》等广泛报道超过100次。

张宇昊目前担任IEEE电子器件学会功率器件与集成电路技术委员会主席、IEEE电子器件快报副主编、IEEE电力电子汇刊副主编以及多个会议（如IEDM、APEC、WiPDA）的技术程序委员会（TPC）成员。他曾获得麻省理工学院微系统技术实验室博士论文奖、两项IEEE乔治·史密斯奖（IEEE电子器件学会年度最佳论文奖）、四次IEEE国际电子器件会议（IEDM）技术亮点奖、IEEE威廉·M·波特诺伊一等奖论文奖、美国国家科学基金会职业奖、弗吉尼亚理工学院与州立大学杰出新助理教授奖和教职研究员奖、海军研究办公室青年研究者奖、化合物半导体周刊青年科学家奖以及何享健青年科学家奖。他的学生曾获得IEEE电力电子学会博士论文演讲奖和多项APEC最佳演讲奖。

Yuhao Zhang is currently a Full Professor with the Department of Electrical and Computer Engineering of the University of Hong Kong (HKU). He also serves as the Associate Director of the HKU Centre for Advanced Semiconductors and Integrated Circuits. Before joining HKU, he was the Shirish S. Sathaye Associate Professor with Virginia Tech, leading the power semiconductor research at the Center for Power Electronics Systems, the largest academic research center in power electronics in the U.S. He received his Ph. D. and S. M., both in electrical engineering from Massachusetts Institute of Technology (MIT) in 2017 and 2013, respectively. He has authored over 200 papers (including 7 Nature/Science-series papers, 21 IEDM papers, 20+ T-PEL papers as the corresponding author) and 2 book chapters and holds 9 granted U. S. patents. He is a co-author of over 10 highlight/feature/prize papers. His work has been cited over 14,000 times with a h-index of 61 and been widely covered by Nature Electronics, Semiconductor Today, Compound Semiconductors, EE Times, etc. over 100 times.

He currently serves as the Chair of the Power Devices and ICs Technical Committee of the IEEE Electron Device Society, an Associate Editor-in-Chief for IEEE Electron Device Letters, an Associate Editor for IEEE Transactions on Power Electronics, and the TPC member of many conferences (e.g., IEDM, APEC, WiPDA). He received the MIT Microsystems Technology Laboratories Doctoral Dissertation Award, two IEEE George Smith Awards (best paper award of the year in IEEE Electron DeAward, thes), four Technical Highlights of IEEE International Electron Devices Meeting (IEDM), IEEE William M. Portnoy 1st Prize Paper Award, the National Science Foundation CAREER Award, the Outstanding New Assistant Professor Award and Faculty Fellow Award of Virginia Tech, the Office of Naval Research Young Investigator Award, the Compound Semiconductor Week Young Scientist Award, and the He Xiang Jian Young Scientist Award. His students received the Ph.D. Thesis Talk Award of the IEEE Power Electronics Society and several APEC Best Presentation Awards.

参与方式

校内同学可直接前往报告地点，校外人员需扫码填写问卷以办理入校报备。

报名截止时间

2026年9月8日（周二）

下午 17:00

报名成功后将于2026年9月9日下午17:00前通过邮件发送报名成功回执及入校报备说明，如未收到回执邮件，或有特殊情况，可随时联系负责同学。

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